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Metal-semiconductor Compound Contacts to Nanoscale Transistors
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Metal-semiconductor Compound Contacts to Nanoscale Transistors. |
| 개인저자 | Chen, Renjie. |
| 단체저자명 | University of California, San Diego. Electrical Engineering (Applied Physics). |
| 발행사항 | [S.l.]: University of California, San Diego., 2018. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2018. |
| 형태사항 | 220 p. |
| 기본자료 저록 | Dissertation Abstracts International 79-12B(E). Dissertation Abstract International |
| ISBN | 9780438168992 |
| 학위논문주기 | Thesis (Ph.D.)--University of California, San Diego, 2018. |
| 일반주기 |
Source: Dissertation Abstracts International, Volume: 79-12(E), Section: B.
Adviser: Shadi A. Dayeh. |
| 요약 | Semiconductor nanowires (NWs) and Fin structures are promising building blocks for next generation ultrascaled devices for electronic and optoelectronic applications. The detailed understanding of and control over the phase transformation that a |
| 요약 | In the first and the major part of this thesis, I will focus on the narrow band gap, high electron mobility III--V semiconductor, InGaAs, motivated by its potential in sub-10 nm metal-oxide-semiconductor field-effect transistors (MOSFETs). In ch |
| 요약 | In the second part, I will use the Ge/Si core/shell NW as a model system to talk about the compound contact formation in semiconductor heterostructures. In chapter 5, we managed to control the synchronous core/shell interface during the solid-st |
| 요약 | Finally, as appearing in chapter 6, I will introduce the ongoing electrical measurements of contact resistance for InGaAs transistors, and adapt the solid-phase-regrowth method to future reduce the contact resistance with locally introduced dopa |
| 일반주제명 | Electrical engineering. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
