LDR | | 02498nam u200421 4500 |
001 | | 000000418373 |
005 | | 20190215162817 |
008 | | 181129s2018 |||||||||||||||||c||eng d |
020 | |
▼a 9780438306004 |
035 | |
▼a (MiAaPQ)AAI10748348 |
035 | |
▼a (MiAaPQ)fsu:14363 |
040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 247004 |
082 | 0 |
▼a 530 |
100 | 1 |
▼a Memaran, Shahriar.
▼0 (orcid)0000-0003-0560-5853. |
245 | 10 |
▼a Lateral P-N Junctions Based on 2 -D Materials. |
260 | |
▼a [S.l.]:
▼b The Florida State University.,
▼c 2018. |
260 | 1 |
▼a Ann Arbor:
▼b ProQuest Dissertations & Theses,
▼c 2018. |
300 | |
▼a 100 p. |
500 | |
▼a Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B. |
500 | |
▼a Advisers: Luis Balicas |
502 | 1 |
▼a Thesis (Ph.D.)--The Florida State University, 2018. |
520 | |
▼a The discovery of graphene marked a turning point in research and interest towards 2 -D materials. Among them, Transition Metal Dichalcogenides (TMDs) and Metal Monochalcogenides (MM) have seen an upturn in interest owing to their versatile prope |
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▼a In Chapter 1 a brief introduction of highlighted properties of the newly emerged 2 -D materials and their heterostructures is provided. |
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▼a Chapter 2 focuses on field-effect transistor response of few atomic layers of MoSe2, MoTe2 and WSe2. In contrast to previous reports on MoSe2 FETs electrically contacted with Ni, MoSe2 FETs electrically contacted with Ti display ambipolar behavi |
520 | |
▼a Chapter 3 evaluates electrostatically gated p-n junctions based on MoSe2 and the photovoltaic response of electrostatically generated p-n junctions composed of approximately 10 atomic layers of MoSe 2 stacked onto dielectric h-BN is presented. |
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▼a Chapter 4 presents electrical and optical characterization of monolayer and bilayer lateral heterostructures of MoS2-WS2 and MoSe2-WSe2, grown by a one-pot chemical vapor deposition (CVD) synthesis approach, using a single heterogeneous solid so |
590 | |
▼a School code: 0071. |
650 | 4 |
▼a Condensed matter physics. |
690 | |
▼a 0611 |
710 | 20 |
▼a The Florida State University.
▼b Physics. |
773 | 0 |
▼t Dissertation Abstracts International
▼g 80-01B(E). |
773 | |
▼t Dissertation Abstract International |
790 | |
▼a 0071 |
791 | |
▼a Ph.D. |
792 | |
▼a 2018 |
793 | |
▼a English |
856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14996981
▼n KERIS
▼z 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
980 | |
▼a 201812
▼f 2019 |
990 | |
▼a ***1012033 |