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020 ▼a 9780438121218
035 ▼a (MiAaPQ)AAI10902821
040 ▼a MiAaPQ ▼c MiAaPQ ▼d 247004
0820 ▼a 620.5
1001 ▼a Martin, Thomas P., Jr.
24510 ▼a Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface During Oxidation Reactions on Injection of Interstitials.
260 ▼a [S.l.]: ▼b University of Florida., ▼c 2017.
260 1 ▼a Ann Arbor: ▼b ProQuest Dissertations & Theses, ▼c 2017.
300 ▼a 158 p.
500 ▼a Source: Dissertation Abstracts International, Volume: 79-11(E), Section: B.
5021 ▼a Thesis (Ph.D.)--University of Florida, 2017.
520 ▼a It is well known that the oxidation of silicon will inject interstitial atoms into the bulk, causing various effects such as OED and OSF. The presence of germanium at this oxidizing interface has long been known to suppress this interstitial inj
590 ▼a School code: 0070.
650 4 ▼a Nanotechnology.
690 ▼a 0652
71020 ▼a University of Florida. ▼b Materials Science and Engineering.
7730 ▼t Dissertation Abstracts International ▼g 79-11B(E).
773 ▼t Dissertation Abstract International
790 ▼a 0070
791 ▼a Ph.D.
792 ▼a 2017
793 ▼a English
85640 ▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000403 ▼n KERIS ▼z 이 자료의 원문은 한국교육학술정보원에서 제공합니다.
980 ▼a 201812 ▼f 2019
990 ▼a ***1012033