| LDR | | 02311nam u200409 4500 |
| 001 | | 000000419746 |
| 005 | | 20190215163925 |
| 008 | | 181129s2018 |||||||||||||||||c||eng d |
| 020 | |
▼a 9780438345317 |
| 035 | |
▼a (MiAaPQ)AAI10929453 |
| 035 | |
▼a (MiAaPQ)cornellgrad:11118 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 247004 |
| 082 | 0 |
▼a 621.3 |
| 100 | 1 |
▼a Zhu, Mingda. |
| 245 | 10 |
▼a Exploring Polarization Doping in Gan for Power Applications. |
| 260 | |
▼a [S.l.]:
▼b Cornell University.,
▼c 2018. |
| 260 | 1 |
▼a Ann Arbor:
▼b ProQuest Dissertations & Theses,
▼c 2018. |
| 300 | |
▼a 167 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B. |
| 500 | |
▼a Adviser: Huili Grace Xing. |
| 502 | 1 |
▼a Thesis (Ph.D.)--Cornell University, 2018. |
| 520 | |
▼a GaN has made tremendous progress in photonic and radio frequency applications, largely thanks to its wide band gap (3.4 eV), the high electron mobility (up to 2200 cm2 /V · s) and saturation velocity (>10 7 cm/s). With the wide band gap and high |
| 520 | |
▼a GaN high electron mobility transistors (HEMTs), which are based on the polarization-induced 2DEG, have already been well researched for power applications. The highest reported breakdown voltage of GaN HEMTs is as high as &sim |
| 520 | |
▼a In contrast to the polarization-induced 2DEG, the polarization-induced 3D bulk doping is rarely studied for power applications. Here we start by studying the electron mobility in polarization-doped AlxGa 1-x N with a low doping concentration of |
| 520 | |
▼a Both polarization-induced 2DEG and bulk doping are then applied to a GaN metal- oxide-semiconductor HEMT (MOSHEMT) with a polarization-doped p-type back barrier. This device, referred to as PolarMOSH is an integral component for the power transi |
| 590 | |
▼a School code: 0058. |
| 650 | 4 |
▼a Electrical engineering. |
| 690 | |
▼a 0544 |
| 710 | 20 |
▼a Cornell University.
▼b Electrical & Computer Engrng. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 80-01B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0058 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2018 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000945
▼n KERIS
▼z 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a ***1012033 |