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020 ▼a 9780438135208
035 ▼a (MiAaPQ)AAI10903695
040 ▼a MiAaPQ ▼c MiAaPQ ▼d 247004
0820 ▼a 620.11
1001 ▼a Kragh-Buetow, Katherine Cora.
24510 ▼a Robust Electrical Contacts for Sensors and Electronics in Space Flight.
260 ▼a [S.l.]: ▼b The Pennsylvania State University., ▼c 2016.
260 1 ▼a Ann Arbor: ▼b ProQuest Dissertations & Theses, ▼c 2016.
300 ▼a 181 p.
500 ▼a Source: Dissertation Abstracts International, Volume: 79-12(E), Section: B.
5021 ▼a Thesis (Ph.D.)--The Pennsylvania State University, 2016.
520 ▼a The continued advancement of silicon-based electronics has transformed people&#129
520 ▼a Ohmic contacts to p- and n-type 4H-SiC using alloyed tungsten-nickel (W:Ni) refractory thin films were investigated. Transfer length measurement test structures on p-type 4H-SiC (NA= 3 x 1020 cm--3 ) epitaxial layers revealed ohmic contacts with
520 ▼a Further aging of the ohmic contacts was explored for both 1000 °C+ and 600 °C. At the higher temperatures, significant degradation in ohmic contacts was seen for all temperatures after an additional 0.5 h at peak temperature except for 1000 °C.
520 ▼a Metal-InN interfaces were characterized in a side-by-side study on the polar {0001} faces. The Ni films on (0001) and (0001¯) InN exhibited different reaction kinetics upon annealing at 400 °C. Structural and chemical analysis using grazing inci
590 ▼a School code: 0176.
650 4 ▼a Materials science.
650 4 ▼a Electrical engineering.
650 4 ▼a Physics.
690 ▼a 0794
690 ▼a 0544
690 ▼a 0605
71020 ▼a The Pennsylvania State University. ▼b Materials Science and Engineering.
7730 ▼t Dissertation Abstracts International ▼g 79-12B(E).
773 ▼t Dissertation Abstract International
790 ▼a 0176
791 ▼a Ph.D.
792 ▼a 2016
793 ▼a English
85640 ▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000680 ▼n KERIS ▼z 이 자료의 원문은 한국교육학술정보원에서 제공합니다.
980 ▼a 201812 ▼f 2019
990 ▼a ***1012033