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020 ▼a 9780438284470
035 ▼a (MiAaPQ)AAI10969984
040 ▼a MiAaPQ ▼c MiAaPQ ▼d 247004
0820 ▼a 621.3
1001 ▼a Vechalapu, Kasunaidu.
24510 ▼a Enabling High Efficiency Medium Voltage Converter for High Speed Drives and Other Grid Applications using Low Voltage (LV) and High Voltage (HV) Silicon Carbide (SiC) Devices.
260 ▼a [S.l.]: ▼b North Carolina State University., ▼c 2018.
260 1 ▼a Ann Arbor: ▼b ProQuest Dissertations & Theses, ▼c 2018.
300 ▼a 221 p.
500 ▼a Source: Dissertation Abstracts International, Volume: 79-12(E), Section: B.
500 ▼a Adviser: Subhashish Bhattacharya.
5021 ▼a Thesis (Ph.D.)--North Carolina State University, 2018.
520 ▼a The recent development of Wide Band Gap (WBG) devices such as LV SiC MOSFET devices and HV SiC devices have opened up the scope of research in medium voltage (MV) applications. This dissertation investigates the impact of series connected LV SiC
520 ▼a The MV voltage source Inverter for high-speed drive applications require DC bus &ge
520 ▼a To evaluate the impact of HV SiC devices in MV power converters, a detailed characterization of 15 kV SiC MOSFET (two parallel dies per module) and demonstration of a DC-DC boost converter (unidirectional and bidirectional configurations) using
520 ▼a To enable the operation of HV SiC devices in DC-DC soft switching converters for MV/HV applications at extremely low dv/dt values, detailed experimental characterization is explored on (i) the soft switching of HV SiC devices using external snub
590 ▼a School code: 0155.
650 4 ▼a Electrical engineering.
690 ▼a 0544
71020 ▼a North Carolina State University. ▼b Electrical Engineering.
7730 ▼t Dissertation Abstracts International ▼g 79-12B(E).
773 ▼t Dissertation Abstract International
790 ▼a 0155
791 ▼a Ph.D.
792 ▼a 2018
793 ▼a English
85640 ▼u http://www.riss.kr/pdu/ddodLink.do?id=T15001305 ▼n KERIS ▼z 이 자료의 원문은 한국교육학술정보원에서 제공합니다.
980 ▼a 201812 ▼f 2019
990 ▼a ***1012033