| LDR | | 00000nam u2200205 4500 |
| 001 | | 000000433915 |
| 005 | | 20200226133016 |
| 008 | | 200131s2019 ||||||||||||||||| ||eng d |
| 020 | |
▼a 9781085773201 |
| 035 | |
▼a (MiAaPQ)AAI13885154 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 247004 |
| 082 | 0 |
▼a 620.11 |
| 100 | 1 |
▼a Berg, Alexander Hillel Klaimitz. |
| 245 | 10 |
▼a TiO2 and NiO:Cu Carrier-Selective Barrier Layers for Heterojunction Solar Cells. |
| 260 | |
▼a [S.l.]:
▼b Princeton University.,
▼c 2019. |
| 260 | 1 |
▼a Ann Arbor:
▼b ProQuest Dissertations & Theses,
▼c 2019. |
| 300 | |
▼a 214 p. |
| 500 | |
▼a Source: Dissertations Abstracts International, Volume: 81-04, Section: B. |
| 500 | |
▼a Advisor: Sturm, James C. |
| 502 | 1 |
▼a Thesis (Ph.D.)--Princeton University, 2019. |
| 506 | |
▼a This item must not be sold to any third party vendors. |
| 520 | |
▼a Next-generation solar cell designs will figure significantly in the approaching green energy mix. This thesis makes contributions to both the modeling and the materials of these devices. External quantum efficiency-based measurements of PEDOT/n- Si/TiO2 solar cells are used, in conjunction with modeling, to extract the surface recombination velocity of the n-Si/CVD-TiO2 interface. It is also shown that even very thin layers of ALD-TiO2 can effectively passivate crystalline silicon, though even the thinnest layers contribute measurably to the hole barrier. The increase in surface recombination velocity after ALD-NiO overlayer deposition is linked to changes in the TiO2 stoichiometry as measured by XPS. We also present significant contributions to the transient electrical modeling of double-heterojunction silicon solar cells. It is shown how these measurements can be used to determine both the front- and back-interface recombination velocities in fully fabricated solar cells. Physics-based modeling is combined with full device simulations to account for geometric effects, and the full results are applied to measurements of PEDOT/n-Si and PEDOT/n-Si/TiO2 heterojunction solar cells, showing that emitter efficiency is an increasingly significant problem in these devices as the back interface is made more ideal. Next, a thorough account is given of a novel ALD-NiO deposition process, outlining how changes in deposition parameters change the content of the resulting films. A process is also developed to fabricate ALD-CuO, and the two are integrated to give, for the first time, Cu-doped NiO deposited by ALD. The copper is shown to increase film conductivity, an effect corroborated by spectroscopic band measurements. ALD-NiO is shown to depin the interfacial Fermi level in NiO/c-Si diodes |
| 590 | |
▼a School code: 0181. |
| 650 | 4 |
▼a Electrical engineering. |
| 650 | 4 |
▼a Materials science. |
| 690 | |
▼a 0544 |
| 690 | |
▼a 0794 |
| 710 | 20 |
▼a Princeton University.
▼b Electrical Engineering. |
| 773 | 0 |
▼t Dissertations Abstracts International
▼g 81-04B. |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0181 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2019 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T15491419
▼n KERIS
▼z 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
| 980 | |
▼a 202002
▼f 2020 |
| 990 | |
▼a ***1816162 |
| 991 | |
▼a E-BOOK |