| LDR | | 00000nam u2200205 4500 |
| 001 | | 000000434109 |
| 005 | | 20200226141026 |
| 008 | | 200131s2019 ||||||||||||||||| ||eng d |
| 020 | |
▼a 9781088351215 |
| 035 | |
▼a (MiAaPQ)AAI22585403 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 247004 |
| 082 | 0 |
▼a 530 |
| 100 | 1 |
▼a Muralidharan, Pradyumna. |
| 245 | 10 |
▼a Multiscale Modeling of Silicon Heterojunction Solar Cells. |
| 260 | |
▼a [S.l.]:
▼b Arizona State University.,
▼c 2019. |
| 260 | 1 |
▼a Ann Arbor:
▼b ProQuest Dissertations & Theses,
▼c 2019. |
| 300 | |
▼a 178 p. |
| 500 | |
▼a Source: Dissertations Abstracts International, Volume: 81-04, Section: B. |
| 500 | |
▼a Advisor: Goodnick, Stephen M |
| 502 | 1 |
▼a Thesis (Ph.D.)--Arizona State University, 2019. |
| 506 | |
▼a This item must not be sold to any third party vendors. |
| 520 | |
▼a Silicon photonic technology continues to dominate the solar industry driven by steady improvement in device and module efficiencies. Currently, the world record conversion efficiency (~26.6%) for single junction silicon solar cell technologies is held by silicon heterojunction (SHJ) solar cells based on hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). These solar cells utilize the concept of carrier selective contacts to improve device efficiencies. A carrier selective contact is designed to optimize the collection of majority carriers while blocking the collection of minority carriers. In the case of SHJ cells, a thin intrinsic a-Si:H layer provides crucial passivation between doped a-Si:H and the c-Si absorber that is required to create a high efficiency cell. There has been much debate regarding the role of the intrinsic a-Si:H passivation layer on the transport of photogenerated carriers, and its role in optimizing device performance. In this work, a multiscale model is presented which utilizes different simulation methodologies to study interfacial transport across the intrinsic a-Si:H/c-Si heterointerface and through the a-Si:H passivation layer. In particular, an ensemble Monte Carlo simulator was developed to study high field behavior of photogenerated carriers at the intrinsic a-Si:H/c-Si heterointerface, a kinetic Monte Carlo program was used to study transport of photogenerated carriers across the intrinsic a-Si:H passivation layer, and a drift-diffusion model was developed to model the behavior in the quasi-neutral regions of the solar cell. This work reports de-coupled and self-consistent simulations to fully understand the role and effect of transport across the a-Si:H passivation layer in silicon heterojunction solar cells, and relates this to overall solar cell device performance. |
| 590 | |
▼a School code: 0010. |
| 650 | 4 |
▼a Electrical engineering. |
| 650 | 4 |
▼a Applied physics. |
| 650 | 4 |
▼a Computational physics. |
| 690 | |
▼a 0544 |
| 690 | |
▼a 0215 |
| 690 | |
▼a 0216 |
| 710 | 20 |
▼a Arizona State University.
▼b Electrical Engineering. |
| 773 | 0 |
▼t Dissertations Abstracts International
▼g 81-04B. |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0010 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2019 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T15492942
▼n KERIS
▼z 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
| 980 | |
▼a 202002
▼f 2020 |
| 990 | |
▼a ***1008102 |
| 991 | |
▼a E-BOOK |