LDR | | 02131nam u200697 4500 |
001 | | 000000467411 |
005 | | 20220223112630 |
008 | | 220131s2020 us ||||||||||||||c||eng d |
020 | |
▼a 9798538102846 |
035 | |
▼a (MiAaPQ)AAI28149545 |
040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 247004 |
082 | 0 |
▼a 530 |
100 | 1 |
▼a Jia, Yichen. |
245 | 10 |
▼a Spin-Dependent Quantum Transport in Epitaxial BaTiO3-Germanium Tunnel Junctions. |
260 | |
▼a [S.l.]:
▼b Yale University.,
▼c 2020. |
260 | 1 |
▼a Ann Arbor:
▼b ProQuest Dissertations & Theses,
▼c 2020. |
300 | |
▼a 218 p. |
500 | |
▼a Source: Dissertations Abstracts International, Volume: 83-03, Section: B. |
500 | |
▼a Advisor: Ahn, Charles H. |
502 | 1 |
▼a Thesis (Ph.D.)--Yale University, 2020. |
506 | |
▼a This item must not be sold to any third party vendors. |
590 | |
▼a School code: 0265. |
650 | 4 |
▼a Condensed matter physics. |
650 | 4 |
▼a Quantum physics. |
650 | 4 |
▼a Materials science. |
650 | 4 |
▼a Silicon. |
650 | 4 |
▼a Lifetime. |
650 | 4 |
▼a Electrodes. |
650 | 4 |
▼a Semiconductors. |
650 | 4 |
▼a Experiments. |
650 | 4 |
▼a Magnetic fields. |
650 | 4 |
▼a Conductivity. |
650 | 4 |
▼a Electric fields. |
650 | 4 |
▼a Sensors. |
650 | 4 |
▼a Applied physics. |
650 | 4 |
▼a Molecular beam epitaxy. |
650 | 4 |
▼a CMOS. |
650 | 4 |
▼a Advisors. |
650 | 4 |
▼a Transistors. |
650 | 4 |
▼a Boundary conditions. |
650 | 4 |
▼a Thin films. |
650 | 4 |
▼a Geometry. |
690 | |
▼a 0611 |
690 | |
▼a 0794 |
690 | |
▼a 0599 |
690 | |
▼a 0215 |
710 | 20 |
▼a Yale University.
▼b Electrical Engineering. |
773 | 0 |
▼t Dissertations Abstracts International
▼g 83-03B. |
773 | |
▼t Dissertation Abstract International |
790 | |
▼a 0265 |
791 | |
▼a Ph.D. |
792 | |
▼a 2020 |
793 | |
▼a English |
856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T16051080
▼n KERIS
▼z 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
980 | |
▼a 202202
▼f 2022 |
990 | |
▼a ***1012033 |
991 | |
▼a E-BOOK |