| LDR | | 01851nam u200565 4500 |
| 001 | | 000000470503 |
| 005 | | 20220223115354 |
| 008 | | 220131s2021 us ||||||||||||||c||eng d |
| 020 | |
▼a 9798494453761 |
| 035 | |
▼a (MiAaPQ)AAI28812974 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 247004 |
| 082 | 0 |
▼a 306 |
| 100 | 1 |
▼a Ramesh, Pranav. |
| 245 | 10 |
▼a Approaching the Limits of Low Resistance Contacts to N-Type Germanium. |
| 260 | |
▼a [S.l.]:
▼b Stanford University.,
▼c 2021. |
| 260 | 1 |
▼a Ann Arbor:
▼b ProQuest Dissertations & Theses,
▼c 2021. |
| 300 | |
▼a 125 p. |
| 500 | |
▼a Source: Dissertations Abstracts International, Volume: 83-05, Section: B. |
| 500 | |
▼a Advisor: Saraswat, Krishna;Fan, Jonathan;Pop, Eric. |
| 502 | 1 |
▼a Thesis (Ph.D.)--Stanford University, 2021. |
| 506 | |
▼a This item must not be sold to any third party vendors. |
| 590 | |
▼a School code: 0212. |
| 650 | 4 |
▼a Families & family life. |
| 650 | 4 |
▼a Silicon nitride. |
| 650 | 4 |
▼a Phosphorus. |
| 650 | 4 |
▼a Integrated circuits. |
| 650 | 4 |
▼a Technological change. |
| 650 | 4 |
▼a Ion implantation. |
| 650 | 4 |
▼a Semiconductor doping. |
| 650 | 4 |
▼a Transistors. |
| 650 | 4 |
▼a Electromagnetism. |
| 650 | 4 |
▼a Electrical engineering. |
| 650 | 4 |
▼a Engineering. |
| 650 | 4 |
▼a European studies. |
| 650 | 4 |
▼a Individual & family studies. |
| 650 | 4 |
▼a Regional studies. |
| 690 | |
▼a 0544 |
| 690 | |
▼a 0537 |
| 690 | |
▼a 0440 |
| 690 | |
▼a 0628 |
| 690 | |
▼a 0604 |
| 710 | 20 |
▼a Stanford University. |
| 773 | 0 |
▼t Dissertations Abstracts International
▼g 83-05B. |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0212 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2021 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T16055335
▼n KERIS
▼z 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
| 980 | |
▼a 202202
▼f 2022 |
| 990 | |
▼a ***1012033 |
| 991 | |
▼a E-BOOK |