| LDR | | 02067nam u200685 4500 |
| 001 | | 000000470690 |
| 005 | | 20220223115533 |
| 008 | | 220131s2021 us ||||||||||||||c||eng d |
| 020 | |
▼a 9798535542294 |
| 035 | |
▼a (MiAaPQ)AAI28649613 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 247004 |
| 082 | 0 |
▼a 621.3 |
| 100 | 1 |
▼a Yang, Tsung-Han. |
| 245 | 10 |
▼a Wide Bandgap Semiconductor Power Devices Using Ga2O3 GaN and BN. |
| 260 | |
▼a [S.l.]:
▼b Arizona State University.,
▼c 2021. |
| 260 | 1 |
▼a Ann Arbor:
▼b ProQuest Dissertations & Theses,
▼c 2021. |
| 300 | |
▼a 92 p. |
| 500 | |
▼a Source: Dissertations Abstracts International, Volume: 83-03, Section: B. |
| 500 | |
▼a Advisor: Zhao, Yuji. |
| 502 | 1 |
▼a Thesis (Ph.D.)--Arizona State University, 2021. |
| 506 | |
▼a This item must not be sold to any third party vendors. |
| 590 | |
▼a School code: 0010. |
| 650 | 4 |
▼a Electrical engineering. |
| 650 | 4 |
▼a Chemical engineering. |
| 650 | 4 |
▼a Boron. |
| 650 | 4 |
▼a Simulation. |
| 650 | 4 |
▼a Diodes. |
| 650 | 4 |
▼a Investigations. |
| 650 | 4 |
▼a Silicon carbide. |
| 650 | 4 |
▼a Semiconductors. |
| 650 | 4 |
▼a Electric fields. |
| 650 | 4 |
▼a Hydrochloric acid. |
| 650 | 4 |
▼a High temperature. |
| 650 | 4 |
▼a Plasma etching. |
| 650 | 4 |
▼a Hydrogen. |
| 650 | 4 |
▼a Aluminum. |
| 650 | 4 |
▼a Heat. |
| 650 | 4 |
▼a Energy. |
| 650 | 4 |
▼a Morphology. |
| 650 | 4 |
▼a Radiation. |
| 650 | 4 |
▼a Efficiency. |
| 650 | 4 |
▼a Bias. |
| 690 | |
▼a 0544 |
| 690 | |
▼a 0542 |
| 690 | |
▼a 0287 |
| 690 | |
▼a 0791 |
| 710 | 20 |
▼a Arizona State University.
▼b Electrical Engineering. |
| 773 | 0 |
▼t Dissertations Abstracts International
▼g 83-03B. |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0010 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2021 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T16053502
▼n KERIS
▼z 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
| 980 | |
▼a 202202
▼f 2022 |
| 990 | |
▼a ***1012033 |
| 991 | |
▼a E-BOOK |