대구한의대학교 향산도서관

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검색간략리스트

1.
저널기사
Strain Relaxation Mechanisms in Si~1~-~x Ge~x Layers Grown by Solid-Phase Epitaxy: Influence of the Layer Composition and Growth Temperature: / Rodriguez, A.;Rodriguez, T.;Kling, A.; / Institute of Electrical and Electronics Engineers / Journal of Electronic Materials / 1999 /