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Polar and Nonpolar III-Nitride Heterostructures for Near-Infrared Intersubband Materials and Devices

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서명/저자사항Polar and Nonpolar III-Nitride Heterostructures for Near-Infrared Intersubband Materials and Devices.
개인저자Shirazi-Hosseini-Dokht, Mohammad Ali.
단체저자명Purdue University. Electrical and Computer Engineering.
발행사항[S.l.]: Purdue University., 2018.
발행사항Ann Arbor: ProQuest Dissertations & Theses, 2018.
형태사항127 p.
기본자료 저록Dissertation Abstracts International 79-10B(E).
Dissertation Abstract International
ISBN9780438017030
학위논문주기Thesis (Ph.D.)--Purdue University, 2018.
일반주기 Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B.
Adviser: Michael Manfra.
요약III-nitride semiconductors are currently intensively studied for applications in infrared optoelectronics, such as detectors and emitters for spectral regions not easily accessible with other semiconductors. Owing to the large conduction band of
요약We also investigate near-infrared intersubband transitions in high-Al content AlGaN/GaN superlattices using the nonpolar m-plane orientation. The nonpolar orientation lacks the polarization-induced internal electric field along c-axis that is no
일반주제명Electrical engineering.
Materials science.
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