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Polar and Nonpolar III-Nitride Heterostructures for Near-Infrared Intersubband Materials and Devices
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Polar and Nonpolar III-Nitride Heterostructures for Near-Infrared Intersubband Materials and Devices. |
| 개인저자 | Shirazi-Hosseini-Dokht, Mohammad Ali. |
| 단체저자명 | Purdue University. Electrical and Computer Engineering. |
| 발행사항 | [S.l.]: Purdue University., 2018. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2018. |
| 형태사항 | 127 p. |
| 기본자료 저록 | Dissertation Abstracts International 79-10B(E). Dissertation Abstract International |
| ISBN | 9780438017030 |
| 학위논문주기 | Thesis (Ph.D.)--Purdue University, 2018. |
| 일반주기 |
Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B.
Adviser: Michael Manfra. |
| 요약 | III-nitride semiconductors are currently intensively studied for applications in infrared optoelectronics, such as detectors and emitters for spectral regions not easily accessible with other semiconductors. Owing to the large conduction band of |
| 요약 | We also investigate near-infrared intersubband transitions in high-Al content AlGaN/GaN superlattices using the nonpolar m-plane orientation. The nonpolar orientation lacks the polarization-induced internal electric field along c-axis that is no |
| 일반주제명 | Electrical engineering. Materials science. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
