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Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memoryv
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memoryv. |
| 개인저자 | Li, Xiang. |
| 단체저자명 | University of California, Los Angeles. Electrical Engineering 0303. |
| 발행사항 | [S.l.]: University of California, Los Angeles., 2018. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2018. |
| 형태사항 | 196 p. |
| 기본자료 저록 | Dissertation Abstracts International 79-10B(E). Dissertation Abstract International |
| ISBN | 9780438021785 |
| 학위논문주기 | Thesis (Ph.D.)--University of California, Los Angeles, 2018. |
| 일반주기 |
Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B.
Adviser: Kang L. Wang. |
| 요약 | Magnetic memory that utilizes spin to store information has become one of the most promising candidates for next-generation non-volatile memory. Electric-field-assisted writing of magnetic tunnel junctions (MTJs) that exploits the voltage-contro |
| 요약 | In this dissertation, we will first discuss the advantage of MeRAM over other memory technologies with a focus on array-level memory performance, system-level 3D integration, and scaling at advanced nodes. Then, we will introduce the physics of |
| 일반주제명 | Electrical engineering. Computer engineering. Nanotechnology. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
