자료유형 | 학위논문 |
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서명/저자사항 | Behavior of Highly Te doped InGaAs. |
개인저자 | Kennon, Ethan Lowell. |
단체저자명 | University of Florida. Materials Science and Engineering. |
발행사항 | [S.l.]: University of Florida., 2017. |
발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2017. |
형태사항 | 165 p. |
기본자료 저록 | Dissertation Abstracts International 79-11B(E). Dissertation Abstract International |
ISBN | 9780438120655 |
학위논문주기 | Thesis (Ph.D.)--University of Florida, 2017. |
일반주기 |
Source: Dissertation Abstracts International, Volume: 79-11(E), Section: B.
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요약 | The exponential growth of semiconductor technology has allowed it to reach the prevalence that we see today. In order for growth to continue, new materials such as InGaAs will be needed, but the contact resistivity of these materials is troubles |
일반주제명 | Materials science. Engineering. Electrical engineering. |
언어 | 영어 |
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