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Electronic Properties of Next-Generation Semiconductors

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자료유형학위논문
서명/저자사항Electronic Properties of Next-Generation Semiconductors.
개인저자Mayers, Matthew Z.
단체저자명Columbia University. Chemical Physics.
발행사항[S.l.]: Columbia University., 2018.
발행사항Ann Arbor: ProQuest Dissertations & Theses, 2018.
형태사항97 p.
기본자료 저록Dissertation Abstracts International 80-01B(E).
Dissertation Abstract International
ISBN9780438308985
학위논문주기Thesis (Ph.D.)--Columbia University, 2018.
일반주기 Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B.
Adviser: David R. Reichman.
요약The need for efficient, cheap, and durable semiconductors for photovoltaic and optoelectronic applications has spurred a number of dramatic recent developments in semiconductor quantum physics. Aided by advanced synthetic and characterization te
요약In Chapter 1 I explore methylammonium lead iodide (MAPbI3), a paradigmatic hybrid organic-inorganic perovskite system. To explain charge carrier dynamics in this material, I develop a microscopic tight-binding model. The average band structure i
요약In Chapters 2 and 3, I turn to the subject of atomically-thin transition metal dichalcogenides. I improve upon past variational calculations of exciton and trion binding energies in these materials by applying diffusion Monte Carlo to exactly ca
요약Finally, in Chapter 4, I study variants of the GW approximation to the one-particle Green's function for calculating correlation energies and spectral weights for the three-dimensional homogeneous electron gas. By relating the cumulant generatin
일반주제명Chemistry.
Condensed matter physics.
Materials science.
언어영어
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