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Resistive Switching Effects of Vanadium Pentoxide Thin Film
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Resistive Switching Effects of Vanadium Pentoxide Thin Film. |
| 개인저자 | Wan, Zhenni. |
| 단체저자명 | University of Washington. Engineering. |
| 발행사항 | [S.l.]: University of Washington., 2018. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2018. |
| 형태사항 | 114 p. |
| 기본자료 저록 | Dissertation Abstracts International 79-09B(E). Dissertation Abstract International |
| ISBN | 9780355850703 |
| 학위논문주기 | Thesis (Ph.D.)--University of Washington, 2018. |
| 일반주기 |
Source: Dissertation Abstracts International, Volume: 79-09(E), Section: B.
Advisers: Manjeri Anantram |
| 이용제한사항 | This item is not available from ProQuest Dissertations & Theses. |
| 요약 | In this Ph.D. work, the resistive switching effects of vanadium pentoxide (V2O5) thin films are extensively explored and investigated. Contrary to conventional Flash memory devices where the information is stored by the electrons in the floating |
| 요약 | Both reversible and irreversible resistive switching are discovered for the first time in V2O5 based MIM devices and the switching effects are studied as a function of metal contacts and environment, which play an important role in determining t |
| 요약 | V2O5 xerogel film synthesized by sol-gel process experiences drastic atomic structural change during post annealing process, resulting in significant impact on resistive switching characteristics. X-ray diffraction analysis reveals that -phase V |
| 요약 | In order to make the synthesis of V¬2O5 thin film more compatible with modern IC fabrication processes, thermal evaporation is employed for V2O5 deposition. Reversible bipolar switching is preserved and the stability of I-V characteristics over |
| 일반주제명 | Electrical engineering. Materials science. Physics. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
