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First-principles Modeling of Thin-film Ferroelectrics

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서명/저자사항First-principles Modeling of Thin-film Ferroelectrics.
개인저자Angsten, Thomas Henry.
단체저자명University of California, Berkeley. Materials Science & Engineering.
발행사항[S.l.]: University of California, Berkeley., 2018.
발행사항Ann Arbor: ProQuest Dissertations & Theses, 2018.
형태사항112 p.
기본자료 저록Dissertation Abstracts International 80-01B(E).
Dissertation Abstract International
ISBN9780438324817
학위논문주기Thesis (Ph.D.)--University of California, Berkeley, 2018.
일반주기 Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B.
Adviser: Mark D. Asta.
요약The goal of this dissertation is to explore the properties of thin-film ferroelectrics using first-principles computational methods. Achieving this goal requires both the development of efficient methods for computing thin-film properties as wel
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요약Further, an effort is made to identify alternative vanadate perovskite-derivative systems similar to the well-studied pressure-stabilized PVO structure. To achieve this, the stability of perovskite-derivative thin-film structures of KVO3 and NaV
일반주제명Materials science.
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