자료유형 | 학위논문 |
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서명/저자사항 | Excitons in Transition Metal Dichalcogenide van Waals Heterostructures. |
개인저자 | Calman, Erica. |
단체저자명 | University of California, San Diego. Physics. |
발행사항 | [S.l.]: University of California, San Diego., 2019. |
발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2019. |
형태사항 | 54 p. |
기본자료 저록 | Dissertations Abstracts International 81-05B. Dissertation Abstract International |
ISBN | 9781687913326 |
학위논문주기 | Thesis (Ph.D.)--University of California, San Diego, 2019. |
일반주기 |
Source: Dissertations Abstracts International, Volume: 81-05, Section: B.
Advisor: Butov, Leonid V. |
이용제한사항 | This item must not be sold to any third party vendors. |
요약 | Excitons are quasi-partciles consisting of an electro-statically bound electron and hole which have long been observed in semiconducting and insulating materials. A spatially indirect exciton (IX) is an exciton in which the electron and the hole are spatially separated. This is achieved through the use of a static electric field and engineered semiconductor heterosteructures. Indirect excitons interact with one another and can effeciently re-radiate, so they provide a means for light to interact with light in solid media, and can thus be used for efficient optical signal processing. However, the most common material for studying indirect excitons (GaAs) cannot support excitons at temperatures above ~ 100 K. This limitation, due to thermal fluctuations having enough energy to cause exciton dissocation prevents the creation of practical devices for excitonic signal processing. This dissertation demonstrates an increase in the binding energy and thus operating temperature of indirect excitons by utelizing van der Waals transition metal dichalcogenide heterostructures. These atomically thin materials have binding energies on the order of 0:5 eV which support excitons at 300 K. |
일반주제명 | Physics. |
언어 | 영어 |
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