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Scalable and Accurate Memory System Simulation
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Scalable and Accurate Memory System Simulation. |
| 개인저자 | Li, Shang. |
| 단체저자명 | University of Maryland, College Park. Electrical Engineering. |
| 발행사항 | [S.l.]: University of Maryland, College Park., 2019. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2019. |
| 형태사항 | 194 p. |
| 기본자료 저록 | Dissertations Abstracts International 81-05B. Dissertation Abstract International |
| ISBN | 9781687925190 |
| 학위논문주기 | Thesis (Ph.D.)--University of Maryland, College Park, 2019. |
| 일반주기 |
Source: Dissertations Abstracts International, Volume: 81-05, Section: B.
Advisor: Jacob, Bruce. |
| 이용제한사항 | This item must not be sold to any third party vendors. |
| 요약 | Memory systems today possess more complexity than ever. On one hand, main memory technology has a much more diverse portfolio. Other than the mainstream DDR DRAMs, a variety of DRAM protocols have been proliferating in certain domains. Non-Volatile Memory(NVM) also finally has commodity main memory products, introducing more heterogeneity to the main memory media. On the other hand, the scale of computer systems, from personal computers, server computers, to high performance computing systems, has been growing in response to increasing computing demand. Memory systems have to be able to keep scaling to avoid bottlenecking the whole system. However, current memory simulation works cannot accurately or efficiently model these developments, making it hard for researchers and developers to evaluate or to optimize designs for memory systems.In this study, we attack these issues from multiple angles. First, we develop a fast and validated cycle accurate main memory simulator that can accurately model almost all existing DRAM protocols and some NVM protocols, and it can be easily extended to support upcoming protocols as well. We showcase this simulator by conducting a thorough characterization over existing DRAM protocols and provide insights on memory system designs.Secondly, to efficiently simulate the increasingly paralleled memory systems, we propose a lax synchronization model that allows efficient parallel DRAM simulation. We build the first ever practical parallel DRAM simulator that can speedup the simulation by up to a factor of three with single digit percentage loss in accuracy comparing to cycle accurate simulations. We also developed mitigation schemes to further improve the accuracy with no additional performance cost.Moreover, we discuss the limitation of cycle accurate models, and explore the possibility of alternative modeling of DRAM. We propose a novel approach that converts DRAM timing simulation into a classification problem. By doing so we can make predictions on DRAM latency for each memory request upon first sight, which makes it compatible for scalable architecture simulation frameworks. We developed prototypes based on various machine learning models and they demonstrate excellent performance and accuracy results that makes them a promising alternative to cycle accurate models.Finally, for large scale memory systems where data movement is often the performance limiting factor, we propose a set of interconnect topologies and implement them in a parallel discrete event simulation framework. We evaluate the proposed topologies through simulation and prove that their scalability and performance exceeds existing topologies with increasing system size or workloads. |
| 일반주제명 | Computer engineering. Computer science. Electrical engineering. |
| 언어 | 영어 |
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: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
