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Understanding Threshold Switching in TaOx-based Selection Devices
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Understanding Threshold Switching in TaOx-based Selection Devices. |
| 개인저자 | Goodwill, Jonathan M. |
| 단체저자명 | Carnegie Mellon University. Materials Science and Engineering. |
| 발행사항 | [S.l.]: Carnegie Mellon University., 2019. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2019. |
| 형태사항 | 125 p. |
| 기본자료 저록 | Dissertations Abstracts International 81-04B. Dissertation Abstract International |
| ISBN | 9781687904935 |
| 학위논문주기 | Thesis (Ph.D.)--Carnegie Mellon University, 2019. |
| 일반주기 |
Source: Dissertations Abstracts International, Volume: 81-04, Section: B.
Advisor: Skowronski, Marek. |
| 이용제한사항 | This item must not be sold to any third party vendors.This item must not be added to any third party search indexes. |
| 요약 | In the future, Von Neumann and neuromorphic computing architectures will be made more energy efficient by incorporating novel memory technologies in between main memory and disk levels. By doing this it will help to alleviate the processor-memory bottleneck. Over the past decade numerous types of emerging memories have surfaced with the most promising being crossbar arrays because of the highest possible packing density. Currently, memory elements to store state have somewhat matured but another device is needed in series to limit the current in the crossbar array, a selection device. The selection device must sufficiently meet the needs of the memory element while, at the same time, have highly non-linear I-V characteristics. This requires the selector to be adaptable and still be able to retain its properties. Only by understanding the fundamental physics that give rise to the device properties will we be able to adapt them for certain memory elements.The purpose of the work shown herein is to provide a better understanding of the fundamental processes leading to threshold switching and electro-formation in TaOx selection devices. This is done by first developing a model for threshold switching based on an electro-thermal feedback loop between conductivity and temperature. The model is able to reproduce both transient and quasi-DC I-V characteristics as well as the spatial distributions of temperature, current density, and expansion. The model has been directly validated by the agreement between expansion distributions in simulation and experiment. Lastly, based on the knowledge gained about threshold switching, the electro-formation process was interpreted as a chemical runaway induced by the elevated temperatures experienced during threshold switching, and the position of a resistive gap, responsible for putting the device into a high resistance state, was determined. |
| 일반주제명 | Materials science. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
