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Impact Of Deep Traps On CIGs Solar Cell Performance And Reliability

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서명/저자사항Impact Of Deep Traps On CIGs Solar Cell Performance And Reliability.
개인저자Paul, Pran Krishna.
단체저자명The Ohio State University. Electrical and Computer Engineering.
발행사항[S.l.]: The Ohio State University., 2019.
발행사항Ann Arbor: ProQuest Dissertations & Theses, 2019.
형태사항204 p.
기본자료 저록Dissertations Abstracts International 81-02B.
Dissertation Abstract International
ISBN9781085581875
학위논문주기Thesis (Ph.D.)--The Ohio State University, 2019.
일반주기 Source: Dissertations Abstracts International, Volume: 81-02, Section: B.
Advisor: Arehart, Aaron.
이용제한사항This item must not be sold to any third party vendors.
요약Thin-film polycrystalline Cu(In,Ga)Se2 (CIGS) based photovoltaic has the potential to reach significant market share in the terrestrial solar area due to its high optical absorption, tunable bandgap, low cost of deposition, flexibility and high material stability. Despite these advantages, CIGS conversion efficiency is still about two-thirds of the Shockley-Queisser limit due, at least in part, to crystalline defects and related carrier traps. CIGS films contain different grain boundaries, crystalline orientations, and phases which create many intrinsic and extrinsic traps/energy levels throughout the bandgap. Deep traps in CIGS not only cause the initial solar cell efficiency loss but are also responsible for instabilities (temporary and recoverable changes in the solar cell parameters such as efficiency) and degradation (permanent changes) induced by exposure to light, heat, and moisture. To improve the efficiency and reliability of CIGS-based solar cells it is necessary to reduce the number of traps
일반주제명Electrical engineering.
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