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Reliability Studies in Silicon Carbide and Silicon Power Mosfets
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Reliability Studies in Silicon Carbide and Silicon Power Mosfets. |
| 개인저자 | Ghosh, Amartya Kumar. |
| 단체저자명 | The Pennsylvania State University. |
| 발행사항 | [S.l.]: The Pennsylvania State University., 2022. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2022. |
| 형태사항 | 124 p. |
| 기본자료 저록 | Dissertations Abstracts International 84-02B. Dissertation Abstract International |
| ISBN | 9798841572107 |
| 학위논문주기 | Thesis (Ph.D.)--The Pennsylvania State University, 2022. |
| 일반주기 |
Source: Dissertations Abstracts International, Volume: 84-02, Section: B.
Advisor: Awadelkarim, Osama O. . |
| 이용제한사항 | This item must not be sold to any third party vendors. |
| 일반주제명 | Receivers & amplifiers. Disadvantages. Physics. Silicon carbide. Electrodes. Oxidation. Semiconductors. Electric fields. Circuits. Diffusion. Transistors. Electrical engineering. Engineering. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
