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3D Vertical Resistive Switching Memory Towards Ultrahigh-Density Non-Volatile Memory
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | 3D Vertical Resistive Switching Memory Towards Ultrahigh-Density Non-Volatile Memory. |
| 개인저자 | Qin, Shengjun. |
| 단체저자명 | Stanford University. |
| 발행사항 | [S.l.]: Stanford University., 2022. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2022. |
| 형태사항 | 110 p. |
| 기본자료 저록 | Dissertations Abstracts International 84-05B. Dissertation Abstract International |
| ISBN | 9798357506610 |
| 학위논문주기 | Thesis (Ph.D.)--Stanford University, 2022. |
| 일반주기 |
Source: Dissertations Abstracts International, Volume: 84-05, Section: B.
Advisor: Saraswat, Krishna;Wong, S. Simon. |
| 이용제한사항 | This item must not be sold to any third party vendors. |
| 일반주제명 | Tin. Random access memory. Electrodes. Semiconductors. Power. Logic. Electric fields. Optimization. Data processing. Families & family life. Design. Connectivity. CMOS. Arrays. Transistors. Energy consumption. Computer science. Electrical engineering. Electromagnetics. Energy. Individual & family studies. Physics. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
