대구한의대학교 향산도서관

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저널기사
Fabrication and Characterization of 0.2um InAlAs/InGaAs Metamorphic HEMT's with Inverse Step-Graded InAlAs Buffer on GaAs Substrate / Dae-Hyum Kim / Institute of Electronics Engineers of Korea / Journal of Semiconductor Technology and Science / 2001 /
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