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Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface During Oxidation Reactions on Injection of Interstitials
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface During Oxidation Reactions on Injection of Interstitials. |
| 개인저자 | Martin, Thomas P., Jr. |
| 단체저자명 | University of Florida. Materials Science and Engineering. |
| 발행사항 | [S.l.]: University of Florida., 2017. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2017. |
| 형태사항 | 158 p. |
| 기본자료 저록 | Dissertation Abstracts International 79-11B(E). Dissertation Abstract International |
| ISBN | 9780438121218 |
| 학위논문주기 | Thesis (Ph.D.)--University of Florida, 2017. |
| 일반주기 |
Source: Dissertation Abstracts International, Volume: 79-11(E), Section: B.
|
| 요약 | It is well known that the oxidation of silicon will inject interstitial atoms into the bulk, causing various effects such as OED and OSF. The presence of germanium at this oxidizing interface has long been known to suppress this interstitial inj |
| 일반주제명 | Nanotechnology. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
