상세정보
Export to Refworks부가기능
Exploring Polarization Doping in Gan for Power Applications
상세 프로파일
| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Exploring Polarization Doping in Gan for Power Applications. |
| 개인저자 | Zhu, Mingda. |
| 단체저자명 | Cornell University. Electrical & Computer Engrng. |
| 발행사항 | [S.l.]: Cornell University., 2018. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2018. |
| 형태사항 | 167 p. |
| 기본자료 저록 | Dissertation Abstracts International 80-01B(E). Dissertation Abstract International |
| ISBN | 9780438345317 |
| 학위논문주기 | Thesis (Ph.D.)--Cornell University, 2018. |
| 일반주기 |
Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B.
Adviser: Huili Grace Xing. |
| 요약 | GaN has made tremendous progress in photonic and radio frequency applications, largely thanks to its wide band gap (3.4 eV), the high electron mobility (up to 2200 cm2 /V · s) and saturation velocity (>10 7 cm/s). With the wide band gap and high |
| 요약 | GaN high electron mobility transistors (HEMTs), which are based on the polarization-induced 2DEG, have already been well researched for power applications. The highest reported breakdown voltage of GaN HEMTs is as high as &sim |
| 요약 | In contrast to the polarization-induced 2DEG, the polarization-induced 3D bulk doping is rarely studied for power applications. Here we start by studying the electron mobility in polarization-doped AlxGa 1-x N with a low doping concentration of |
| 요약 | Both polarization-induced 2DEG and bulk doping are then applied to a GaN metal- oxide-semiconductor HEMT (MOSHEMT) with a polarization-doped p-type back barrier. This device, referred to as PolarMOSH is an integral component for the power transi |
| 일반주제명 | Electrical engineering. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
