상세정보
Export to Refworks부가기능
TiO2 and NiO:Cu Carrier-Selective Barrier Layers for Heterojunction Solar Cells
상세 프로파일
| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | TiO2 and NiO:Cu Carrier-Selective Barrier Layers for Heterojunction Solar Cells. |
| 개인저자 | Berg, Alexander Hillel Klaimitz. |
| 단체저자명 | Princeton University. Electrical Engineering. |
| 발행사항 | [S.l.]: Princeton University., 2019. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2019. |
| 형태사항 | 214 p. |
| 기본자료 저록 | Dissertations Abstracts International 81-04B. Dissertation Abstract International |
| ISBN | 9781085773201 |
| 학위논문주기 | Thesis (Ph.D.)--Princeton University, 2019. |
| 일반주기 |
Source: Dissertations Abstracts International, Volume: 81-04, Section: B.
Advisor: Sturm, James C. |
| 이용제한사항 | This item must not be sold to any third party vendors. |
| 요약 | Next-generation solar cell designs will figure significantly in the approaching green energy mix. This thesis makes contributions to both the modeling and the materials of these devices. External quantum efficiency-based measurements of PEDOT/n- Si/TiO2 solar cells are used, in conjunction with modeling, to extract the surface recombination velocity of the n-Si/CVD-TiO2 interface. It is also shown that even very thin layers of ALD-TiO2 can effectively passivate crystalline silicon, though even the thinnest layers contribute measurably to the hole barrier. The increase in surface recombination velocity after ALD-NiO overlayer deposition is linked to changes in the TiO2 stoichiometry as measured by XPS. We also present significant contributions to the transient electrical modeling of double-heterojunction silicon solar cells. It is shown how these measurements can be used to determine both the front- and back-interface recombination velocities in fully fabricated solar cells. Physics-based modeling is combined with full device simulations to account for geometric effects, and the full results are applied to measurements of PEDOT/n-Si and PEDOT/n-Si/TiO2 heterojunction solar cells, showing that emitter efficiency is an increasingly significant problem in these devices as the back interface is made more ideal. Next, a thorough account is given of a novel ALD-NiO deposition process, outlining how changes in deposition parameters change the content of the resulting films. A process is also developed to fabricate ALD-CuO, and the two are integrated to give, for the first time, Cu-doped NiO deposited by ALD. The copper is shown to increase film conductivity, an effect corroborated by spectroscopic band measurements. ALD-NiO is shown to depin the interfacial Fermi level in NiO/c-Si diodes |
| 일반주제명 | Electrical engineering. Materials science. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
