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Multiscale Modeling of Silicon Heterojunction Solar Cells
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Multiscale Modeling of Silicon Heterojunction Solar Cells. |
| 개인저자 | Muralidharan, Pradyumna. |
| 단체저자명 | Arizona State University. Electrical Engineering. |
| 발행사항 | [S.l.]: Arizona State University., 2019. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2019. |
| 형태사항 | 178 p. |
| 기본자료 저록 | Dissertations Abstracts International 81-04B. Dissertation Abstract International |
| ISBN | 9781088351215 |
| 학위논문주기 | Thesis (Ph.D.)--Arizona State University, 2019. |
| 일반주기 |
Source: Dissertations Abstracts International, Volume: 81-04, Section: B.
Advisor: Goodnick, Stephen M |
| 이용제한사항 | This item must not be sold to any third party vendors. |
| 요약 | Silicon photonic technology continues to dominate the solar industry driven by steady improvement in device and module efficiencies. Currently, the world record conversion efficiency (~26.6%) for single junction silicon solar cell technologies is held by silicon heterojunction (SHJ) solar cells based on hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). These solar cells utilize the concept of carrier selective contacts to improve device efficiencies. A carrier selective contact is designed to optimize the collection of majority carriers while blocking the collection of minority carriers. In the case of SHJ cells, a thin intrinsic a-Si:H layer provides crucial passivation between doped a-Si:H and the c-Si absorber that is required to create a high efficiency cell. There has been much debate regarding the role of the intrinsic a-Si:H passivation layer on the transport of photogenerated carriers, and its role in optimizing device performance. In this work, a multiscale model is presented which utilizes different simulation methodologies to study interfacial transport across the intrinsic a-Si:H/c-Si heterointerface and through the a-Si:H passivation layer. In particular, an ensemble Monte Carlo simulator was developed to study high field behavior of photogenerated carriers at the intrinsic a-Si:H/c-Si heterointerface, a kinetic Monte Carlo program was used to study transport of photogenerated carriers across the intrinsic a-Si:H passivation layer, and a drift-diffusion model was developed to model the behavior in the quasi-neutral regions of the solar cell. This work reports de-coupled and self-consistent simulations to fully understand the role and effect of transport across the a-Si:H passivation layer in silicon heterojunction solar cells, and relates this to overall solar cell device performance. |
| 일반주제명 | Electrical engineering. Applied physics. Computational physics. |
| 언어 | 영어 |
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