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Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices. |
| 개인저자 | Walters, Glen Harris. |
| 단체저자명 | University of Florida. Electrical and Computer Engineering. |
| 발행사항 | [S.l.]: University of Florida., 2020. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2020. |
| 형태사항 | 171 p. |
| 기본자료 저록 | Dissertations Abstracts International 82-06B. Dissertation Abstract International |
| ISBN | 9798698594918 |
| 학위논문주기 | Thesis (Ph.D.)--University of Florida, 2020. |
| 일반주기 |
Source: Dissertations Abstracts International, Volume: 82-06, Section: B.
Advisor: Nishida, Toshikazu. |
| 이용제한사항 | This item must not be sold to any third party vendors. |
| 일반주제명 | Electrical engineering. Ferroelectrics. CMOS. Semiconductors. Thin films. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
