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Spin-Dependent Quantum Transport in Epitaxial BaTiO3-Germanium Tunnel Junctions
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| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Spin-Dependent Quantum Transport in Epitaxial BaTiO3-Germanium Tunnel Junctions. |
| 개인저자 | Jia, Yichen. |
| 단체저자명 | Yale University. Electrical Engineering. |
| 발행사항 | [S.l.]: Yale University., 2020. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2020. |
| 형태사항 | 218 p. |
| 기본자료 저록 | Dissertations Abstracts International 83-03B. Dissertation Abstract International |
| ISBN | 9798538102846 |
| 학위논문주기 | Thesis (Ph.D.)--Yale University, 2020. |
| 일반주기 |
Source: Dissertations Abstracts International, Volume: 83-03, Section: B.
Advisor: Ahn, Charles H. |
| 이용제한사항 | This item must not be sold to any third party vendors. |
| 일반주제명 | Condensed matter physics. Quantum physics. Materials science. Silicon. Lifetime. Electrodes. Semiconductors. Experiments. Magnetic fields. Conductivity. Electric fields. Sensors. Applied physics. Molecular beam epitaxy. CMOS. Advisors. Transistors. Boundary conditions. Thin films. Geometry. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
