상세정보
Export to Refworks부가기능
Approaching the Limits of Low Resistance Contacts to N-Type Germanium
상세 프로파일
| 자료유형 | 학위논문 |
|---|---|
| 서명/저자사항 | Approaching the Limits of Low Resistance Contacts to N-Type Germanium. |
| 개인저자 | Ramesh, Pranav. |
| 단체저자명 | Stanford University. |
| 발행사항 | [S.l.]: Stanford University., 2021. |
| 발행사항 | Ann Arbor: ProQuest Dissertations & Theses, 2021. |
| 형태사항 | 125 p. |
| 기본자료 저록 | Dissertations Abstracts International 83-05B. Dissertation Abstract International |
| ISBN | 9798494453761 |
| 학위논문주기 | Thesis (Ph.D.)--Stanford University, 2021. |
| 일반주기 |
Source: Dissertations Abstracts International, Volume: 83-05, Section: B.
Advisor: Saraswat, Krishna;Fan, Jonathan;Pop, Eric. |
| 이용제한사항 | This item must not be sold to any third party vendors. |
| 일반주제명 | Families & family life. Silicon nitride. Phosphorus. Integrated circuits. Technological change. Ion implantation. Semiconductor doping. Transistors. Electromagnetism. Electrical engineering. Engineering. European studies. Individual & family studies. Regional studies. |
| 언어 | 영어 |
| 바로가기 | 
: 이 자료의 원문은 한국교육학술정보원에서 제공합니다. |
